검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors Hiroki M, Oda Y, Watanabe N, Maeda N, Yokoyama H, Kumakura K, Yamamoto H Journal of Crystal Growth, 382, 36, 2013 |
| 2 |
Metalorganic vapor phase epitaxy growth of AlGaN/GaN heterostructures on sapphire substrates Hiroki M, Maeda N, Kobayashi N Journal of Crystal Growth, 237, 956, 2002 |
| 3 |
Growth of high-quality polycrystalline GaN on glass substrate by gas source molecular beam epitaxy Tampo H, Asahi H, Imanishi Y, Hiroki M, Ohnishi K, Yamada K, Asami K, Gonda S Journal of Crystal Growth, 227, 442, 2001 |
| 4 |
Improved properties of polycrystalline GaN grown on silica glass substrate Hiroki M, Asahi H, Tampo H, Asami K, Gonda S Journal of Crystal Growth, 209(2-3), 387, 2000 |