화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Reduced temperature S-parameter measurements of 400+GHz sub-micron InP DHBTs
Li JC, Hussain T, Hitko DA, Royter Y, Fields CH, Milosavljevic I, Thomas S, Rajavel RD, Asbeck PM, Sokolich M
Solid-State Electronics, 51(6), 870, 2007
2 200 GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers
Li JC, Lao ZH, Chen MY, Rajavel RD, Thomas S, Bui SS, Shi BQ, Guinn KV, Duvall JR, Hitko DA, Chow DH, Sokolich M
Solid-State Electronics, 51(1), 1, 2007