검색결과 : 35건
| No. | Article |
|---|---|
| 1 |
Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design Mehandru R, Dang G, Kim S, Ren F, Hobson WS, Lopata J, Pearton SJ, Chang W, Shen H Solid-State Electronics, 46(5), 699, 2002 |
| 2 |
Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers Dang G, Luo B, Ren F, Hobson WS, Lopata J, Pearton SJ, Chang W, Shen H Solid-State Electronics, 46(8), 1247, 2002 |
| 3 |
Device series resistance calculations for vertical cavity surface-emitting lasers Dang G, Luo B, Ren F, Hobson WS, Lopata J, Chu SNG, Pearton SJ Electrochemical and Solid State Letters, 4(12), G112, 2001 |
| 4 |
Comparison of dry and wet etch processes for patterning SiO2/TiO2 distributed Bragg reflectors for vertical-cavity surface-emitting lasers Dang G, Cho H, Ip KP, Pearton SJ, Chu SNG, Lopata J, Hobson WS, Chirovsky LMF, Ren F Journal of the Electrochemical Society, 148(2), G25, 2001 |
| 5 |
p-ohmic contact study for intracavity contacts in AlGaAs/GaAs vertical cavity surface-emitting lasers Luo B, Dang G, Zhang AP, Ren F, Lopata J, Chu SNG, Hobson WS, Pearton SJ Journal of the Electrochemical Society, 148(12), G676, 2001 |
| 6 |
Process development for small-area GaN/AlGaN heterojunction bipolar transistors Lee KP, Zhang AP, Dang G, Ren F, Hobson WS, Lopata J, Abenathy CR, Pearton SJ, Lee JW Journal of Vacuum Science & Technology A, 19(4), 1846, 2001 |
| 7 |
Self-aligned process for emitter- and base-regrowth GaNHBTs and BJTs Lee KP, Zhang AP, Dang G, Ren F, Han J, Chu SNG, Hobson WS, Lopata J, Abernathy CR, Pearton SJ, Lee JW Solid-State Electronics, 45(2), 243, 2001 |
| 8 |
Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs Hobson WS, Lopata J, Chirovsky LMF, Chu SNG, Dang G, Lou B, Ren F, Tayahi M, Kilper DC, Pearton SJ Solid-State Electronics, 45(9), 1639, 2001 |
| 9 |
Effect of PECVD of SiO2 passivation layers on GaN and InGaP Baik KH, Park PY, Luo B, Lee KP, Shin JH, Abernathy CR, Hobson WS, Pearton SJ, Ren F Solid-State Electronics, 45(12), 2093, 2001 |
| 10 |
Inductively coupled plasma etching in ICl- and IBr-based chemistries. Part I: GaAs, GaSb, and AlGaAs Hahn YB, Hays DC, Cho H, Jung KB, Lambers ES, Abernathy CR, Pearton SJ, Hobson WS, Shul RJ Plasma Chemistry and Plasma Processing, 20(3), 405, 2000 |