검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
On the efficiency of stress techniques in gate-last n-type bulk FinFETs Eneman G, Collaert N, Veloso A, De Keersgieter A, De Meyer K, Hoffmann TY, Horiguchi N, Thean A Solid-State Electronics, 74, 19, 2012 |
| 2 |
Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing Hellings G, Rosseel E, Simoen E, Radisic D, Petersen DH, Hansen O, Nielsen PF, Zschatzsch G, Nazir A, Clarysse T, Vandervorst W, Hoffmann TY, De Meyer K Electrochemical and Solid State Letters, 14(1), II39, 2011 |
| 3 |
Study of nitrogen impact on V-FB-EOT roll-off by varying interfacial SiO2 thickness Cho M, Akheyar A, Aoulaiche M, Degraeve R, Ragnarsson LA, Tseng J, Hoffmann TY, Groeseneken G Solid-State Electronics, 62(1), 67, 2011 |
| 4 |
Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric Cho M, Aoulaiche M, Degraeve R, Kaczer B, Kauerauf T, Ragnarsson LA, Adelmann C, Van Elshocht S, Hoffmann TY, Groeseneken G Solid-State Electronics, 63(1), 5, 2011 |