검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe Jost P, Volker H, Poitz A, Poltorak C, Zalden P, Schafer T, Lange FRL, Schmidt RM, Hollander B, Wirtssohn MR, Wuttig M Advanced Functional Materials, 25(40), 6399, 2015 |
| 2 |
Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison Ahl JP, Hertkorn J, Koch H, Galler B, Michel B, Binder M, Hollander B Journal of Crystal Growth, 398, 33, 2014 |
| 3 |
SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications Wirths S, Buca D, Ikonic Z, Harrison P, Tiedemann AT, Hollander B, Stoica T, Mussler G, Breuer U, Hartmann JM, Grutzmacher D, Mantl S Thin Solid Films, 557, 183, 2014 |
| 4 |
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn Oehme M, Buca D, Kostecki K, Wirths S, Hollander B, Kasper E, Schulze J Journal of Crystal Growth, 384, 71, 2013 |
| 5 |
Low temperature RPCVD epitaxial growth of Si1-xGex using Si2H6 and Ge2H6 Wirths S, Buca D, Tiedemann AT, Bernardy P, Hollander B, Stoica T, Mussler G, Breuer U, Mantl S Solid-State Electronics, 83, 2, 2013 |
| 6 |
p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures Minamisawa RA, Buca D, Hollander B, Hartmann JM, Bourdelle KK, Mantl S Journal of the Electrochemical Society, 159(1), H44, 2012 |
| 7 |
Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation Zhang B, Yu W, Zhao QT, Buca D, Hollander B, Hartmann JM, Zhang M, Wang X, Mantl S Electrochemical and Solid State Letters, 14(7), H261, 2011 |
| 8 |
Different architectures of relaxed Si1-xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics Raissi M, Regula G, Belgacem CH, Rochdi N, Bozzo-Escoubas S, Coudreau C, Hollander B, Fnaiech M, D'Avitaya FA, Lazzari JL Journal of Crystal Growth, 328(1), 18, 2011 |
| 9 |
Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH Hollander B, Buca D, Mantl S, Hartmann JM Journal of the Electrochemical Society, 157(6), H643, 2010 |
| 10 |
Addition of yttrium into HfO2 films: Microstructure and electrical properties Dubourdieu C, Rauwel E, Roussel H, Ducroquet F, Hollander B, Rossell M, Van Tendeloo G, Lhostis S, Rushworth S Journal of Vacuum Science & Technology A, 27(3), 503, 2009 |