| 1 |
Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization
Hong WE, Ro JS
Solid-State Electronics, 103, 178, 2015 |
| 2 |
Arc-instability generated during the Joule heating induced crystallization of amorphous silicon films
Hong WE, Ro JS
Thin Solid Films, 519(7), 2371, 2011 |
| 3 |
In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process
Kim DH, Hong WE, Ro JS, Lee SH, Lee CH, Park S
Thin Solid Films, 519(16), 5516, 2011 |
| 4 |
Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification
Hong WE, Kim DH, Kim CW, Ro JS
Thin Solid Films, 520(1), 616, 2011 |
| 5 |
Reverse annealing of boron doped polycrystalline silicon
Jin BJ, Hong WE, Kim DH, Uemoto T, Kim CW, Ro JS
Thin Solid Films, 516(18), 6321, 2008 |
| 6 |
Millisecond crystallization of amorphous silicon films by Joule-heating induced crystallization using a conductive layer
Hong WE, Ro JS
Thin Solid Films, 515(13), 5357, 2007 |
