| 1 |
Characterization of nanotransistors in a semiempirical model
Wulf U, Kucera J, Richter H, Wiatr M, Hontschel J
Thin Solid Films, 613, 6, 2016 |
| 2 |
Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks
Flachowsky S, Herrmann T, Hontschel J, Illgen R, Ong SY, Wiatr M
Solid-State Electronics, 88, 27, 2013 |
| 3 |
Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies
Herrmann T, Flachowsky S, Illgen R, Klix W, Stenzel R, Hontschel J, Feudel T, Horstmann M
Journal of Vacuum Science & Technology B, 28(1), C1G7, 2010 |
| 4 |
Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
Flachowsky S, Illgen R, Herrmann T, Klix W, Stenzel R, Ostermay I, Naumann A, Wei A, Hontschel J, Horstmann M
Journal of Vacuum Science & Technology B, 28(1), C1G12, 2010 |
| 5 |
Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing
Illgen R, Flachowsky S, Herrmann T, Klix W, Stenzel R, Feudel T, Hontschel J, Horstmann M
Journal of Vacuum Science & Technology B, 28(1), C1I12, 2010 |
