검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation Kikuchi Y, Hopf T, Mannaert G, Everaert JL, Kubicek S, Eyben P, Waite A, Borniquel JID, Variam N, Mocuta D, Horiguchi N Solid-State Electronics, 152, 58, 2019 |
| 2 |
Properties and growth peculiarities of Si0.30Ge0.70 stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors Hikavyy A, Rosseel E, Kubicek S, Mannaert G, Favia P, Bender H, Loo R, Horiguchi N Thin Solid Films, 602, 72, 2016 |
| 3 |
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks Ritzenthaler R, Schram T, Bury E, Spessot A, Caillat C, Srividya V, Sebaai F, Mitard J, Ragnarsson LA, Groeseneken G, Horiguchi N, Fazan P, Thean A Solid-State Electronics, 84, 22, 2013 |
| 4 |
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques Redolfi A, Kubicek S, Rooyackers R, Kim MS, Sleeckx E, Devriendt K, Shamiryan D, Vandeweyer T, Delande T, Horiguchi N, Togo M, Wouters JMD, Jurczak M, Hoffmann T, Cockburn A, Gravey V, Diehl DL Solid-State Electronics, 71, 106, 2012 |
| 5 |
On the efficiency of stress techniques in gate-last n-type bulk FinFETs Eneman G, Collaert N, Veloso A, De Keersgieter A, De Meyer K, Hoffmann TY, Horiguchi N, Thean A Solid-State Electronics, 74, 19, 2012 |
| 6 |
Manipulation of Rectangular Arrangement of Se-Ring-Type Molecules on Graphite (Highly Oriented Pyrolytic-Graphite) Surfaces Czajka R, Kasuya A, Horiguchi N, Nishina Y Journal of Vacuum Science & Technology B, 12(3), 1890, 1994 |