화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Deposition and characterization of polycrystalline Si1-xGex films for CMOS transistors gate electrode applications
Lo W, Lin H, Hsia WJ, Yates C, Hornback V, Elmer J, Catabay W, Mirabedini M, Gopinath V, Li EH, Pachura D, Lin J, Duong L, Prasad S, Matsunaga M, Tsuda T
Journal of the Electrochemical Society, 152(1), G110, 2005
2 Characterization of methyl-doped silicon oxide film deposited using Flowfill(TM) chemical vapor deposition technology
Lu HQ, Cui H, Bhat I, Murarka S, Lanford W, Hsia WJ, Li WD
Journal of Vacuum Science & Technology B, 20(3), 828, 2002
3 Copper drift in methyl-doped silicon oxide film
Cui H, Bhat IB, Muraka SP, Lu HQ, Hsia WJ, Catabay W
Journal of Vacuum Science & Technology B, 20(5), 1987, 2002
4 Chemical mechanical polishing of low dielectric constant oxide films deposited using flowfill chemical vapor deposition technology
Cui H, Bhat IB, Murarka SP, Lu HQ, Li WD, Hsia WJ, Catabay W
Journal of the Electrochemical Society, 147(10), 3816, 2000