검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Uniformity of AlGaN/GaN HEMTs grown by ammonia-MBE on 2-in. sapphire substrate Hsu EM, Bardwell JA, Haffouz S, Tang H, Storey C, Chyurlia P Journal of the Electrochemical Society, 152(8), G660, 2005 |
| 2 |
Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors Haffouz S, Tang H, Bardwell JA, Rolfe S, Hsu EM, Sproule I, Moisa S, Beaulieu M, Webb JB Journal of Vacuum Science & Technology B, 23(3), 1199, 2005 |
| 3 |
AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy Haffouz S, Tang H, Bardwell JA, Hsu EM, Webb JB, Rolfe S Solid-State Electronics, 49(5), 802, 2005 |