검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses Wang TB, Hsu WC, Su JL, Hsu RT, Wu YH, Lin YS, Su KH Journal of the Electrochemical Society, 154(3), H131, 2007 |
| 2 |
n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors Lin YS, Huang DH, Hsu WC, Wang TB, Hsu RT, Wu YH Electrochemical and Solid State Letters, 9(2), G37, 2006 |
| 3 |
Growth and characterizations of ZnO-doped near-stoichiometric LiNbO3 crystals by zone-leveling Czochralski method Tsai CB, Hsu WT, Shih MD, Lin YY, Huang YC, Hsieh CK, Hsu WC, Hsu RT, Lan CW Journal of Crystal Growth, 289(1), 145, 2006 |
| 4 |
Low-fire processing and properties of Ferrite plus Dielectric ceramic composite Peng TM, Hsu RT, Jean JH Journal of the American Ceramic Society, 89(9), 2822, 2006 |
| 5 |
Key factors controlling camber behavior during the cofiring of bi-layer ceramic dielectric laminates Hsu RT, Jean JH Journal of the American Ceramic Society, 88(9), 2429, 2005 |
| 6 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations Chen YJ, Hsu WC, Chen YW, Lin YS, Hsu RT, Wu YH Solid-State Electronics, 49(2), 163, 2005 |
| 7 |
Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor Chen YW, Chen YJ, Hsu WC, Hsu RT, Wu YH, Lin YS Journal of Vacuum Science & Technology B, 22(3), 974, 2004 |
| 8 |
Characteristics of In0.52Al0.48As/InxGa1-xAsyP1-y/ In0.52Al0.48As high electron-mobility transistors Chen YW, Hsu WC, Chen YJ, Hsu RT, Wu YH, Lin YS Journal of Vacuum Science & Technology B, 22(3), 1044, 2004 |
| 9 |
Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels Chen YW, Hsu WC, Hsu RT, Wu YH, Chen YJ Solid-State Electronics, 48(1), 119, 2004 |
| 10 |
Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base Chen YW, Hsu WC, Hsu RT, Wu YH, Chen YJ, Lin YS Journal of Vacuum Science & Technology B, 21(6), 2555, 2003 |