화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Resistive switching in HfO2-based atomic layer deposition grown metal insulator metal structures
Jancovic P, Hudec B, Dobrocka E, Derer J, Fedor J, Frohlich K
Applied Surface Science, 312, 112, 2014
2 Resistive switching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface
Hudec B, Paskaleva A, Jancovic P, Derer J, Fedor J, Rosova A, Dobrocka E, Frohlich K
Thin Solid Films, 563, 10, 2014
3 Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors
Aarik L, Arroval T, Rammula R, Mandar H, Sammelselg V, Hudec B, Husekova K, Frohlich K, Aarik J
Thin Solid Films, 565, 19, 2014
4 Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O-3: Growth of high-permittivity dielectrics with low leakage current
Aarik J, Arroval T, Aarik L, Rammula R, Kasikov A, Mandar H, Hudec B, Husekova K, Frohlich K
Journal of Crystal Growth, 382, 61, 2013