검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth Park JS, Curtin M, Hydrick JM, Bai J, Li JT, Cheng Z, Carroll M, Fiorenza JG, Lochtefeld A Electrochemical and Solid State Letters, 12(4), H142, 2009 |
| 2 |
Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping Li JZ, Bai J, Hydrick JM, Park JS, Major C, Carroll M, Fiorenza JG, Lochtefeld A Journal of Crystal Growth, 311(11), 3133, 2009 |
| 3 |
Fabrication of Low-Defectivity, Compressively Strained Ge on Si0.2Ge0.8 Structures Using Aspect Ratio Trapping Park JS, Curtin M, Hydrick JM, Bai J, Carroll M, Fiorenza JG, Lochtefeld A Journal of the Electrochemical Society, 156(4), H249, 2009 |
| 4 |
Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping Li JZ, Hydrick JM, Park JS, Li J, Bai J, Cheng ZY, Carroll M, Fiorenza JG, Lochtefeld A, Chan W, Shellenbarger Z Journal of the Electrochemical Society, 156(7), H574, 2009 |
| 5 |
Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping Park JS, Curtin M, Hydrick JM, Carroll M, Fiorenza JG, Lochtefeld A, Novak S Journal of Vacuum Science & Technology B, 26(5), 1740, 2008 |