화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Improvement of InGaP/GaAs heterointerface quality by controlling AsH3 flow conditions
Fukai YK, Hyuga F, Nittono T, Watanabe K, Sugahara H
Journal of Vacuum Science & Technology B, 17(6), 2524, 1999
2 Thermal-Stability and Degradation Mechanism of Wsin/InGaP Schottky Diodes
Shiojima K, Nishimura K, Hyuga F
Journal of Vacuum Science & Technology B, 14(2), 652, 1996
3 Thermally Stable InGaP/GaAs Schottky Contacts Using Low N Content Double-Layer Wsin
Shiojima K, Nishimura K, Tokumitsu M, Nittono T, Sugawara H, Hyuga F
Journal of Vacuum Science & Technology B, 14(6), 3543, 1996
4 Characterization of In0.48Ga0.52P-Based Thin-Layer Structures Using Spectroscopic Ellipsometry
Watanabe K, Kobayashi K, Wong CC, Xiong YM, Saitoh T, Hyuga F
Thin Solid Films, 270(1-2), 97, 1995