| 1 |
Enhanced contact properties of spray-coated AgNWs source and drain electrodes in oxide thin-film transistors
Jung SY, Kim JY, Choe G, Choi BS, Kim SJ, An TK, Jeong YJ
Current Applied Physics, 21, 2021 |
| 2 |
마이크로파 조사 시간에 따른 InGaZnO 박막 트랜지스터의 전기적 특성 평가
장성철, 박지민, 김형도, 이현석, 김현석
Korean Journal of Materials Research, 30(11), 615, 2020 |
| 3 |
Two-step degradation of a-InGaZnO thin film transistors under DC bias stress
Hu CF, Teng T, Qu XP
Solid-State Electronics, 152, 4, 2019 |
| 4 |
Pulse duration effect during pulsed gate-bias stress in a-InGaZnO thin film transistors
Kim WS, Kang YS, Cho YJ, Park J, Kim G, Kim O
Solid-State Electronics, 152, 53, 2019 |
| 5 |
Low temperature solution-processed IGZO thin-film transistors
Xu WY, Hu LY, Zhao C, Zhang LJ, Zhu DL, Cao PJ, Liu WJ, Han S, Liu XK, Jia F, Zeng YX, Lu YM
Applied Surface Science, 455, 554, 2018 |
| 6 |
High-performance amorphous indium gallium zinc oxide thin-film transistors with sol-gel processed gate dielectric and channel layer fabricated using microwave irradiation
Kang MS, Cho WJ
Current Applied Physics, 18(9), 1080, 2018 |
| 7 |
High-performance amorphous indium gallium zinc oxide thin-film transistors with sol-gel processed gate dielectric and channel layer fabricated using microwave irradiation
Kang MS, Cho WJ
Current Applied Physics, 18(9), 1080, 2018 |
| 8 |
Correlation between spin density and V-th instability of IGZO thin-film transistors
Park JH, Lee S, Lee HS, Kim SK, Park KS, Yoon SY
Current Applied Physics, 18(11), 1447, 2018 |
| 9 |
Recovery of Indium and Gallium from Spent IGZO Targets by Leaching and Solvent Extraction
Gu S, Tominaka T, Dodbiba G, Fujita T
Journal of Chemical Engineering of Japan, 51(8), 675, 2018 |
| 10 |
Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma
Choi JH, Kim SJ, Kim HT, Cho SM
Korean Journal of Chemical Engineering, 35(6), 1348, 2018 |
