1 |
Influence of substrate annealing on inducing Ti3+ and oxygen vacancy in TiO2 thin films deposited via RF magnetron sputtering Abdullah SA, Sahdan MZ, Nafarizal N, Saim H, Embong Z, Rohaida CHC, Adriyanto F Applied Surface Science, 462, 575, 2018 |
2 |
On the measured optical bandgap values of inorganic oxide semiconductors for solar fuels generation Roy D, Samu GF, Hossain MK, Janaky C, Rajeshwar K Catalysis Today, 300, 136, 2018 |
3 |
Electrical and photoelectrical properties of Ag/n-type Si metal/semiconductor contact with organic interlayer Ozerden E, Ocak YS, Tombak A, Kilicoglu T, Turut A Thin Solid Films, 597, 14, 2015 |
4 |
양자점 층의 미세구조 형상이 양자점 LED 전계 발광 특성에 미치는 효과 윤성룡, 전민현, 이전국 Korean Journal of Materials Research, 23(8), 430, 2013 |
5 |
Analysis of temperature dependent electrical properties of Au/perylene-diimide/n-Si Schottky diodes Yuksel OF, Tugluoglu N, Safak H, Nalcacigil Z, Kus M, Karadeniz S Thin Solid Films, 534, 614, 2013 |
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Analysis of current-voltage and capacitance-voltage characteristics of perylene-monoimide/n-Si Schottky contacts Tugluoglu N, Karadeniz S Current Applied Physics, 12(6), 1529, 2012 |
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Analysis of current-voltage and capacitance-voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer Aldemir DA, Esen M, Kokce A, Karatas S, Ozdemir AF Thin Solid Films, 519(18), 6004, 2011 |
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Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode Akkilic K, Ocak YS, Kilicoglu T, Ilhan S, Temel H Current Applied Physics, 10(1), 337, 2010 |
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Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures Gullu O, Baris O, Biber M, Turut A Applied Surface Science, 254(10), 3039, 2008 |
10 |
Effect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diode Kilicoglu T Thin Solid Films, 516(6), 967, 2008 |