검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Effect of epitaxial graphene morphology on adsorption of ambient species Yazdi GR, Akhtar F, Ivanov IG, Schmidt S, Shtepliuk I, Zakharov A, Iakimov T, Yakimova R Applied Surface Science, 486, 239, 2019 |
| 2 |
Monitoring of epitaxial graphene anodization Vagin MY, Sekretaryova AN, Ivanov IG, Hakansson A, Iakimov T, Syvajarvi M, Yakimova R, Lundstrom I, Eriksson M Electrochimica Acta, 238, 91, 2017 |
| 3 |
Surface engineering of SiC via sublimation etching Jokubavicius V, Yazdi GR, Ivanov IG, Niu YR, Zakharov A, Iakimov T, Syvajarvi M, Yakimova R Applied Surface Science, 390, 816, 2016 |
| 4 |
Impact of the initial surface conditions on defect appearance in 4H-SiC epilayers Yakimova R, Jacobson H, Syajarvi M, Kakanakova-Georgieva A, Iakimov T, Virojanadara C, Johansson LI, Janzen E Materials Science Forum, 389-3, 283, 2002 |
| 5 |
Orientation-dependent defect formation in silicon carbide epitaxial layers Yakimova R, Syvajarvi M, Iakimov T, Okunev AO, Udal'tsov VE, Janzen E Materials Science Forum, 433-4, 281, 2002 |
| 6 |
Growth of silicon carbide: process-related defects Yakimova R, Syvajarvi M, Iakimov T, Jacobsson H, Kakanakova-Georgieva A, Raback P, Janzen E Applied Surface Science, 184(1-4), 27, 2001 |
| 7 |
Polytype stability in seeded sublimation growth of 4H-SiC boules Yakimova R, Syvajarvi M, Iakimov T, Jacobsson H, Raback R, Vehanen A, Janzen E Journal of Crystal Growth, 217(3), 255, 2000 |
| 8 |
Considerations on the crystal morphology in the sublimation growth of SiC Raback P, Yakimova R, Syvajarvi M, Iakimov T, Nieminen R, Janzen E Materials Science Forum, 338-3, 95, 2000 |
| 9 |
Characterization of anisotropic step-bunching on as-grown SiC surfaces Syvajarvi M, Yakimova R, Iakimov T, Janzen E Materials Science Forum, 338-3, 375, 2000 |