1 |
Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode Ichihara T, Hatai T, Koshida N Journal of Vacuum Science & Technology B, 27(2), 772, 2009 |
2 |
Synthesis and characterization of organic/inorganic heterostructure films for hybrid light emitting diode Toyama T, Ichihara T, Yamaguchi D, Okamoto H Applied Surface Science, 254(1), 295, 2007 |
3 |
Key role of nanocrystalline feature in porous polycrystalline silicon diodes for efficient ballistic electron emission Ichihara T, Hatai T, Aizawa K, Komoda T, Kojima A, Koshida N Journal of Vacuum Science & Technology B, 22(1), 57, 2004 |
4 |
Correlation between nanostructure and electron emission characteristics of a ballistic electron surface-emitting device Ichihara T, Baba T, Komoda T, Koshida N Journal of Vacuum Science & Technology B, 22(3), 1372, 2004 |
5 |
Annealing effects on the operation stability of ballistic electron emission from electrochemically oxidized nanocrystalline silicon diodes Ichihara T, Honda Y, Baba T, Komoda T, Koshida N Journal of Vacuum Science & Technology B, 22(4), 1784, 2004 |
6 |
Trace ion analysis of seawater by capillary electrophoresis: Determination of iodide using transient isotachophoretic preconcentration Hirokawa T, Ichihara T, Ito K, Timerbaev AR Electrophoresis, 24(14), 2328, 2003 |
7 |
Development of ballistic electron cold cathode by a low-temperature processing of polycrystalline silicon films Ichihara T, Honda Y, Aizawa K, Komoda T, Koshida N Journal of Crystal Growth, 237, 1915, 2002 |
8 |
Spectroscopic studies on electroless deposition of copper on a hydrogen-terminated Si(111) surface in fluoride solutions Ye S, Ichihara T, Uosaki K Journal of the Electrochemical Society, 148(6), C421, 2001 |
9 |
Charge Resonance and Charge-Transfer Interactions of Photogenerated Dicyanovinylstyrylpyridinyl Radicals in Solutions at Room-Temperature Nagamura T, Ichihara T, Kawai H Journal of Physical Chemistry, 100(22), 9370, 1996 |
10 |
Densities of Liquid-Ammonia in the Temperature-Range from 310-K and 360-K at Pressures Up to 200-MPa Ichihara T, Uematsu M Journal of Chemical Thermodynamics, 26(10), 1129, 1994 |