검색결과 : 6건
No. | Article |
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1 |
MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-ln/Sb content for very low turn-on-voltage InP-based DHBTs (vol 404, pg 172, 2014) Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H Journal of Crystal Growth, 424, 80, 2015 |
2 |
Impact of strained GaAs spacer between InP emitter and GaAs1-ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1-ySby/InP DHBTs Hoshi T, Hashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M Journal of Crystal Growth, 395, 31, 2014 |
3 |
MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H Journal of Crystal Growth, 404, 172, 2014 |
4 |
Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition Hoshi T, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Tateno K Journal of Crystal Growth, 380, 197, 2013 |
5 |
Estimation of hydrogen radical density generated from various kinds of catalysts Abe K, Ida M, Izumi A, Terashima S, Sudo T, Watanabe Y, Fukuda Y Thin Solid Films, 517(12), 3449, 2009 |
6 |
Catabolic Potential of Multiple PCB Transformation Systems in Rhodococcus Sp Strain Rha1 Seto M, Ida M, Okita N, Hatta T, Masai E, Fukuda M Biotechnology Letters, 18(11), 1305, 1996 |