화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-ln/Sb content for very low turn-on-voltage InP-based DHBTs (vol 404, pg 172, 2014)
Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H
Journal of Crystal Growth, 424, 80, 2015
2 Impact of strained GaAs spacer between InP emitter and GaAs1-ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1-ySby/InP DHBTs
Hoshi T, Hashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M
Journal of Crystal Growth, 395, 31, 2014
3 MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs
Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H
Journal of Crystal Growth, 404, 172, 2014
4 Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition
Hoshi T, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Tateno K
Journal of Crystal Growth, 380, 197, 2013
5 Estimation of hydrogen radical density generated from various kinds of catalysts
Abe K, Ida M, Izumi A, Terashima S, Sudo T, Watanabe Y, Fukuda Y
Thin Solid Films, 517(12), 3449, 2009
6 Catabolic Potential of Multiple PCB Transformation Systems in Rhodococcus Sp Strain Rha1
Seto M, Ida M, Okita N, Hatta T, Masai E, Fukuda M
Biotechnology Letters, 18(11), 1305, 1996