검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Temperature behavior of Franz-Keldysh oscillation and evaluation of interface electric fields attributed to strain effect of InAs/GaAs quantum dot Kim JS Current Applied Physics, 17(1), 31, 2017 |
| 2 |
Growth and properties of A(III)B(V) QD structures for intermediate band solar cells Vyskocil J, Gladkov P, Petricek O, Hospodkova A, Pangrac J Journal of Crystal Growth, 414, 172, 2015 |
| 3 |
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Hospodkova A, Pangrac J, Oswald J, Hazdra P, Kuldova K, Vyskocil J, Hulicius E Journal of Crystal Growth, 315(1), 110, 2011 |
| 4 |
InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime Hospodkova A, Pangrac J, Vyskocil J, Oswald J, Vetushka A, Caha O, Hazdra P, Kuldova K, Hulicius E Journal of Crystal Growth, 317(1), 39, 2011 |
| 5 |
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots Hospodkova A, Hulicius E, Pangrac J, Oswald J, Vyskocil J, Kuldova K, Simecek T, Hazdra P, Caha O Journal of Crystal Growth, 312(8), 1383, 2010 |
| 6 |
Near-field study of carrier dynamics in InAs/GaAs quantum dots grown on InGaAs layers Tomanek P, Dobis P, Benesova M, Grmela L Materials Science Forum, 482, 151, 2005 |