화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 Elastic and Piezoelectric Properties of Zincblende and Wurtzite Crystalline Nanowire Heterostructures
Boxberg F, Sondergaard N, Xu HQ
Advanced Materials, 24(34), 4692, 2012
2 Quantum dot lasers grown by gas source molecular-beam epitaxy
Gong Q, Chen P, Li SG, Lao YF, Cao CF, Xu CF, Zhang YG, Feng SL, Ma CH, Wang HL
Journal of Crystal Growth, 323(1), 450, 2011
3 Real-time monitoring of InAs QD growth procedure on InP substrate by spectral reflectance
Ahn E, Park K, Kim B, Kim YD, Yoon E
Applied Surface Science, 255(3), 656, 2008
4 InAs/InP QDs with GaxIn1-xAs cap layer by a double-cap procedure using MOVPE selective area growth
Akaishi M, Okawa T, Saito Y, Shimomura K
Journal of Crystal Growth, 310(23), 5069, 2008
5 Wideband wavelength electroluminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growth
Saito Y, Okawa T, Akaishi M, Shimomura K
Journal of Crystal Growth, 310(23), 5073, 2008
6 Growth temperature and InAs supply dependences of InAs quantum dots on InP (001) substrate
Okawa T, Yamauchi Y, Yamamoto J, Yoshida J, Shimomura K
Journal of Crystal Growth, 298, 562, 2007
7 Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array
Yamauchi Y, Okamoto S, Okawa T, Kawakita Y, Yoshida J, Shimomura K
Journal of Crystal Growth, 298, 578, 2007
8 Mechanical properties of InAs/InP semiconductor alloys
Navamathavan R, Arivuoli D, Attolini G, Pelosi C, Choi CK
Applied Surface Science, 253(5), 2657, 2006
9 Synthesis and characterization of III-V rod shape semiconductor nanocrystals
Nedeljkovic JM, Micic OI, Ahrenkiel SP, Nozik AJ
Materials Science Forum, 494, 121, 2005
10 Fabrication of InAs quantum dots by droplet heteroepitaxy on periodic arrays of InP nanopyramids
Yoshida Y, Oga R, Lee WS, Fujiwara Y, Takeda Y
Thin Solid Films, 464-65, 240, 2004