| 1 |
High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode
Tong JC, Tobing LYM, Ni PN, Zhang DH
Applied Surface Science, 427, 605, 2018 |
| 2 |
Fabrication and characterization of high lattice matched InAs/InAsSb superlattice infrared photodetector
Hao RT, Ren Y, Liu SJ, Guo J, Wang GW, Xu YQ, Niu ZC
Journal of Crystal Growth, 470, 33, 2017 |
| 3 |
Structural, optical and electrical characterization of InAs0.83Sb0.17 p-pi-n photodetector grown on GaAs substrate
Erkus M, Senel O, Serincan U
Thin Solid Films, 616, 141, 2016 |
| 4 |
Low temperature transport property of the InSb and InAsSb quantum wells with Al0.1In0.9Sb barrier layers grown by MBE
Shibasaki I, Ishida S, Geka H, Manago T
Journal of Crystal Growth, 425, 76, 2015 |
| 5 |
Phonon frequency variations in high quality InAs1-xSbx epilayers grown on GaAs
Erkus M, Serincan U
Applied Surface Science, 318, 28, 2014 |
| 6 |
Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric model
Hwang SY, Kim TJ, Byun JS, Barange NS, Diware MS, Kim YD, Aspnes DE, Yoon JJ, Song JD
Thin Solid Films, 547, 276, 2013 |
| 7 |
Hall effect and magnetoresistance analysis by electron-hole coexisting model in AlInSb/InAsSb quantum wells
Manago T, Nisizako N, Ishida S, Geka H, Shibasaki I
Journal of Crystal Growth, 311(7), 1711, 2009 |
| 8 |
Influence of Si3N4 and ZnS films on transmittance of InAsSb/InAsPSb hetero structures
Gao YZ, Gong XY, Fang WZ, Deng HY, Hu GJ, Aoyama M, Yamaguchi T, Dai N
Applied Surface Science, 244(1-4), 297, 2005 |
| 9 |
Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices
Wang CA, Shiau DA, Calawa DR
Journal of Crystal Growth, 261(2-3), 372, 2004 |
| 10 |
Low-frequency noise characteristics of AlSb/InAsSb HEMTs
Kruppa W, Boos JB, Bennett BR, Tinkham BP
Solid-State Electronics, 48(10-11), 2079, 2004 |
