검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Interface analysis on MOVPE grown InP-GaInAs-InP double heterostructures for application in infrared solar cells Dobrich A, Schwarzburg K, Hannappel T Solar Energy Materials and Solar Cells, 148, 25, 2016 |
| 2 |
InGaAs quantum wires grown on (100)InP substrates Tzeng TE, Chen CY, Feng DJ, Lay TS Journal of Crystal Growth, 311(7), 1851, 2009 |
| 3 |
CBr4 and Be heavily doped InGaAs grown in a production MBE system Godey S, Dhellemmes S, Wilk A, Zaknoune M, Mollot F Journal of Crystal Growth, 278(1-4), 600, 2005 |
| 4 |
A TCAD methodology for high-speed photodetectors Jacob B, Witzigmann B, Klemenc M, Petit C Solid-State Electronics, 49(6), 1002, 2005 |
| 5 |
X-ray characterization of stacked InP/(InGa)As : C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources Velling P, Keiper D, Brennemann A, Agethen M, Janssen G, Bertenburg RM Journal of Crystal Growth, 248, 139, 2003 |
| 6 |
Alloy composition control of InGaAs/InP grown by Cl-assisted MOVPE with tertiarybutylchloride Naniwae K, Kurihara K, Nishi K, Sugou S Journal of Crystal Growth, 248, 400, 2003 |
| 7 |
Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001) Gendry M, Hollinger G Journal of Crystal Growth, 257(1-2), 51, 2003 |
| 8 |
Determination of well widths in a MOVPE-grown InGaAs/InP multi-quantum well structure using SIMS and photoluminescence Bose DN, Banerji P, Bhunia S, Aparna Y, Chhetri MB, Chakraborty BR Applied Surface Science, 158(1-2), 16, 2000 |
| 9 |
The effect of a thin antimony layer addition on PdZn ohmic contacts for p-type InP Asamizu H, Yamaguchi A, Iguchi Y, Saitoh T, Koide Y, Murakami M Applied Surface Science, 159, 174, 2000 |
| 10 |
X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes Tabuchi M, Takahashi R, Araki M, Hirayama K, Futakuchi N, Shimogaki Y, Nakano Y, Takeda Y Applied Surface Science, 159, 250, 2000 |