| 1 |
Analysis of a novel photovoltaic/thermal system using InGaN/GaN MQWs cells in high temperature applications
Ren X, Li J, Gao DT, Wu LJ, Pei G
Renewable Energy, 168, 11, 2021 |
| 2 |
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
Dominec F, Hospodkova A, Hubacek T, Zikova M, Pangrac J, Kuldova K, Vetushka A, Hulicius E
Journal of Crystal Growth, 507, 246, 2019 |
| 3 |
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
Zikova M, Hospodkova A, Pangrac J, Hubacek T, Oswald J, Kuldova K, Hajek F, Ledoux G, Dujardin C
Journal of Crystal Growth, 506, 8, 2019 |
| 4 |
The Effect of the number of InGaN/GaN pairs on the photoelectrochemical properties of InGaN/GaN multi quantum wells
Bae H, Park JB, Fujii K, Lee HJ, Lee SH, Ryu SW, Lee JK, Ha JS
Applied Surface Science, 401, 348, 2017 |
| 5 |
Improved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AIN on sapphire substrate
Wang HB, Sodabanlu H, Daigo Y, Seino T, Nakagawa T, Sugiyama M
Journal of Crystal Growth, 465, 12, 2017 |
| 6 |
InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid
Sheu JK, Liao PH, Huang TC, Chiang KJ, Lai WC, Lee ML
Solar Energy Materials and Solar Cells, 166, 86, 2017 |
| 7 |
Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells
Miyoshi M, Tsutsumi T, Kabata T, Mori T, Egawa T
Solid-State Electronics, 129, 29, 2017 |
| 8 |
Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties
Gao QX, Liu R, Xiao HD, Cao DZ, Liu JQ, Ma J
Applied Surface Science, 387, 406, 2016 |
| 9 |
Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy
Wu ZL, Chen P, Yang GF, Xu Z, Xu F, Jiang FL, Zhang R, Zheng YD
Applied Surface Science, 331, 444, 2015 |
| 10 |
Effect of p-AlGaN electron blocking layers on the injection and radiative efficiencies in InGaN/GaN light emitting diodes
Oh NC, Lee JG, Dong Y, Kim TS, Yu HJ, Song JH
Current Applied Physics, 15, S7, 2015 |
