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| No. | Article |
|---|---|
| 1 |
Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier Lisesivdin SB, Tasli P, Kasap M, Ozturk M, Arslan E, Ozcelik S, Ozbay E Thin Solid Films, 518(19), 5572, 2010 |