화학공학소재연구정보센터
검색결과 : 43건
No. Article
1 Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma
Choi JH, Kim SJ, Kim HT, Cho SM
Korean Journal of Chemical Engineering, 35(6), 1348, 2018
2 Gradual switching and self-rectifying characteristics of Cu/alpha-IGZO/p(+)-Si RRAM for synaptic device application
Bang S, Kim MH, Kim TH, Lee DK, Kim S, Cho S, Park BG
Solid-State Electronics, 150, 60, 2018
3 Bias and illumination instability analysis of solution-processed a-InGaZnO thin-film transistors with different component ratios
Kim JH, Park EK, Kim MS, Cho HJ, Lee DH, Kim JH, Khang Y, Park K, Kim YS
Thin Solid Films, 645, 154, 2018
4 SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors
Takahashi T, Hoga T, Miyanaga R, Fujii MN, Ishikawa Y, Uraoka Y, Uchiyama K
Thin Solid Films, 665, 173, 2018
5 Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack
Ruan DB, Liu PT, Chiu YC, Kuo PY, Yu MC, Kan KZ, Chien TC, Chen YH, Sze SM
Thin Solid Films, 660, 578, 2018
6 Investigation of optoelectronic performance in In, Ga co-doped ZnO thin films with various In and Ga levels
Sun H, Jen SU, Chiang HP, Chen SC, Lin MH, Chen JY, Wang X
Thin Solid Films, 641, 12, 2017
7 Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor
Besleaga C, Stan GE, Pintilie I, Barquinha P, Fortunato E, Martins R
Applied Surface Science, 379, 270, 2016
8 Analytical approximation of the InGaZnO thin-film transistors surface potential
Colalongo L
Solid-State Electronics, 124, 1, 2016
9 Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer
Liao PY, Chang TC, Hsieh TY, Tsai MY, Chen BW, Chu AK, Chou CH, Chang JF
Thin Solid Films, 603, 359, 2016
10 Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors
Sahoo AK, Wu GM
Thin Solid Films, 605, 129, 2016