1 |
Damage to amorphous indium-gallium-zinc-oxide thin film transistors under Cl2 and BCl3 plasma Choi JH, Kim SJ, Kim HT, Cho SM Korean Journal of Chemical Engineering, 35(6), 1348, 2018 |
2 |
Gradual switching and self-rectifying characteristics of Cu/alpha-IGZO/p(+)-Si RRAM for synaptic device application Bang S, Kim MH, Kim TH, Lee DK, Kim S, Cho S, Park BG Solid-State Electronics, 150, 60, 2018 |
3 |
Bias and illumination instability analysis of solution-processed a-InGaZnO thin-film transistors with different component ratios Kim JH, Park EK, Kim MS, Cho HJ, Lee DH, Kim JH, Khang Y, Park K, Kim YS Thin Solid Films, 645, 154, 2018 |
4 |
SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors Takahashi T, Hoga T, Miyanaga R, Fujii MN, Ishikawa Y, Uraoka Y, Uchiyama K Thin Solid Films, 665, 173, 2018 |
5 |
Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack Ruan DB, Liu PT, Chiu YC, Kuo PY, Yu MC, Kan KZ, Chien TC, Chen YH, Sze SM Thin Solid Films, 660, 578, 2018 |
6 |
Investigation of optoelectronic performance in In, Ga co-doped ZnO thin films with various In and Ga levels Sun H, Jen SU, Chiang HP, Chen SC, Lin MH, Chen JY, Wang X Thin Solid Films, 641, 12, 2017 |
7 |
Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor Besleaga C, Stan GE, Pintilie I, Barquinha P, Fortunato E, Martins R Applied Surface Science, 379, 270, 2016 |
8 |
Analytical approximation of the InGaZnO thin-film transistors surface potential Colalongo L Solid-State Electronics, 124, 1, 2016 |
9 |
Investigating degradation behavior of hole-trapping effect under static and dynamic gate-bias stress in a dual gate a-InGaZnO thin film transistor with etch stop layer Liao PY, Chang TC, Hsieh TY, Tsai MY, Chen BW, Chu AK, Chou CH, Chang JF Thin Solid Films, 603, 359, 2016 |
10 |
Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors Sahoo AK, Wu GM Thin Solid Films, 605, 129, 2016 |