검색결과 : 36건
| No. | Article |
|---|---|
| 1 |
Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitridedAlZrObasedMOScapacitor Quah HJ, Hassan Z, Lim WF International Journal of Energy Research, 45(3), 3838, 2021 |
| 2 |
Atomic-layer deposition of crystalline BeO on SiC Lee SM, Jang Y, Jung J, Yum JH, Larsen ES, Bielawski CW, Wang WJ, Ryou JH, Kim HS, Cha HY, Oh J Applied Surface Science, 469, 634, 2019 |
| 3 |
Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation Ma XL, Zhou LX, Xiang JJ, Yang H, Wang XL, Li YL, Zhang J, Zhao C, Yin HX, Wang WW, Ye TC Applied Surface Science, 493, 478, 2019 |
| 4 |
Electrical and optical characterization of SiOxNy and SiO2 dielectric layers and rear surface passivation by using SiO2/SiOxNy stack layers with screen printed local Al-BSF for c-Si solar cells Balaji N, Nguyen HTT, Park C, Ju M, Raja J, Chatterjee S, Jeyakumar R, Yi J Current Applied Physics, 18(1), 107, 2018 |
| 5 |
Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition Lee WC, Cho CJ, Park SI, Jun DH, Song JD, Hwang CS, Kim SK Current Applied Physics, 18(8), 919, 2018 |
| 6 |
Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition Lee WC, Cho CJ, Park SI, Jun DH, Song JD, Hwang CS, Kim SK Current Applied Physics, 18(8), 919, 2018 |
| 7 |
Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer Wang Q, Cheng XH, Zheng L, Ye PY, Li ML, Shen LY, Li JJ, Zhang DL, Gu ZY, Yu YH Applied Surface Science, 410, 326, 2017 |
| 8 |
Low-frequency noise in bare SOI wafers: Experiments and model Pirro L, Ionica I, Cristoloveanu S, Ghibaudo G Solid-State Electronics, 125, 167, 2016 |
| 9 |
Growth and surface analysis of SiO2 on 4H-SiC for MOS devices Kodigala SR, Chattopadhyay S, Overton C, Ardoin I, Gordon BJ, Johnstone D, Roy D, Barone D Applied Surface Science, 330, 465, 2015 |
| 10 |
Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation Wang XL, Xiang JJ, Wang WW, Xiong YH, Zhang J, Zhao C Applied Surface Science, 357, 1857, 2015 |