| 1 |
Schottky barrier nano-MOSFET with an asymmetrically oxidized source/drain structure
Parizi KB, Peyvast N, Mousavi BK, Mohajerzadeh S, Fathipour M
Solid-State Electronics, 54(1), 48, 2010 |
| 2 |
Theoretical modelling of the I-V characteristics of p-type silicon in fluoride electrolyte in the first electropolishing plateau
Cheggou R, Kadoun A, Gabouze N, Ozanam F, Chazalviel JN
Electrochimica Acta, 54(11), 3053, 2009 |
| 3 |
Simple analytical solution and efficiency improvement of polysilicon emitter solar cells
Zouari A, Trabelsi A, Ben Arab A
Solar Energy Materials and Solar Cells, 92(3), 313, 2008 |
| 4 |
Ballistic electron emission microscopy study of p-type 4H-SiC
Ding Y, Park KB, Pelz JP, Los AV, Mazzola MS
Materials Science Forum, 457-460, 1077, 2004 |
| 5 |
Interfacial oxide determination and chemical/electrical structures of WO2/SiOx/Si gate dielectrics
Xie L, Zhao Y, White MH
Solid-State Electronics, 48(10-11), 2071, 2004 |
| 6 |
The mechanism of hydrogen gas evolution on GaAs cathodes elucidated by in situ infrared spectroscopy
Erne BH, Ozanam F, Chazalviel JN
Journal of Physical Chemistry B, 103(15), 2948, 1999 |
| 7 |
In situ infrared study of the oscillating anodic dissolution of silicon in fluoride electrolytes
Chazalviel JN, da Fonseca C, Ozanam F
Journal of the Electrochemical Society, 145(3), 964, 1998 |
