검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
The band structure change of Hf0.5Zr0.5O2/Ge system upon post deposition annealing Feng Z, Peng Y, Liu H, Sun Y, Wang YT, Meng M, Liu H, Wang JO, Wu R, Wang XL, Cho K, Han GQ, Dong H Applied Surface Science, 488, 778, 2019 |
| 2 |
Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy Wang Q, Cheng XH, Zheng L, Shen LY, Zhang DL, Gu ZY, Qian R, Cao D, Yu YH Applied Surface Science, 428, 1, 2018 |
| 3 |
Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate Liu C, Lu HL, Yang T, Zhang YM, Zhang YM, Liu D, Ma ZQ, Yu WJ, Guo LX Applied Surface Science, 444, 474, 2018 |
| 4 |
Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation Li XF, Liu XJ, Cao YQ, Li AD, Li H, Wu D Applied Surface Science, 264, 783, 2013 |