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Evaluation of the effective work-function of monolayer graphene on silicon dioxide by internal photoemission spectroscopy Trepalin V, Asselberghs I, Brems S, Huyghebaert C, Radu I, Afanas'ev V, Houssa M, Stesmans A Thin Solid Films, 674, 39, 2019 |
2 |
Mapping the interfacial reaction of alpha-Ga2O3 Schottky contacts through scanning internal photoemission microscopy Shiojima K, Kambara H, Matsuda T, Shinohe T Thin Solid Films, 685, 17, 2019 |
3 |
Investigation of ultrathin Pt/ZrO2-Al2O3-ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy Lee SY, Chang J, Choi J, Kim Y, Lim H, Jeon H, Seo H Current Applied Physics, 17(2), 267, 2017 |
4 |
내부 광전자방출 분광법을 이용한 Pt/HfO2/p-Si Metal-Insulator-Semiconductor 커패시터의 쇼트키 배리어 분석 이상연, 서형탁 Korean Journal of Materials Research, 27(1), 48, 2017 |
5 |
Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridge memory stacks Afanas'ev VV, De Stefano F, Houssa M, Stesmans A, Goux L, Opsomer K, Detavernier C, Kittl JA, Jurczak M Thin Solid Films, 533, 34, 2013 |
6 |
Effect of oxygen on tuning the TiNx metal gate work function on LaLuO3 Mitrovic IZ, Przewlocki HM, Piskorski K, Simutis G, Dhanak VR, Sedghi N, Hall S Thin Solid Films, 520(23), 6959, 2012 |
7 |
Band alignment of metal-oxide-semiconductor structure by internal photoemission spectroscopy and spectroscopic ellipsometry Nguyen NV, Kirillov OA, Suehle JS Thin Solid Films, 519(9), 2811, 2011 |
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Characterization of heterojunctions in crystalline-silicon-based solar cells by internal photoemission Sakata I, Yamanaka M, Kawanami H Solar Energy Materials and Solar Cells, 93(6-7), 737, 2009 |
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Internal photoemission spectroscopy measurement of Alq(3)/cathode interface by three layered electron only device Itoh E, Takaishi S, Miyairi K Thin Solid Films, 518(2), 791, 2009 |
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Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers Bera MK, Mahata C, Bhattacharya S, Chakraborty AK, Armstrong BM, Gamble HS, Maiti CK Applied Surface Science, 255(5), 2971, 2008 |