검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Lateral growth and three-dimensional effects in contacts between NiSi0.82Ge0.18 and p(+)-Si0.82Ge0.18 Persson S, Isheden C, Jarmar T, Zhang SL Thin Solid Films, 489(1-2), 159, 2005 |
| 2 |
MOSFETs with recessed SiGe source/drain junctions formed by selective etching and growth Isheden C, Hellstrom PE, Radamson HH, Zhang SL, Ostling M Electrochemical and Solid State Letters, 7(4), G53, 2004 |
| 3 |
Formation of shallow junctions by HCl-based Si etch followed by selective epitaxy of B-doped Si1-xGex in RPCVD Isheden C, Radamson HH, Suvar E, Hellstrom PE, Ostling M Journal of the Electrochemical Society, 151(6), C365, 2004 |