| 1 |
Overexpression of exchange protein directly activated by cAMP-1 (EPAC1) attenuates bladder cancer cell migration
Ichikawa H, Itsumi M, Kajioka S, Maki T, Lee K, Tomita M, Yamaoka S
Biochemical and Biophysical Research Communications, 495(1), 64, 2018 |
| 2 |
Octahedral void defects in Czochralski silicon
Itsumi M
Journal of Crystal Growth, 237, 1773, 2002 |
| 3 |
Sensitivity of SrBi2Ta2O9 capacitors to materials and annealing processes in upper electrode formation
Ohfuji S, Itsumi M, Ogawa S, Shinojima H
Thin Solid Films, 411(2), 274, 2002 |
| 4 |
Analysis of grown-in defects in Czochralski Si
Itsumi M
Journal of Crystal Growth, 210(1-3), 1, 2000 |
| 5 |
Water-assisted repair of plasma-induced damage in the silicon/silicon-dioxide system
Itsumi M, Maeda M, Takeuchi H, Morie T
Journal of Vacuum Science & Technology B, 18(3), 1268, 2000 |
| 6 |
Dielectric characteristics of a metal-insulator-metal capacitor using plasma-enhanced chemical vapor deposited silicon nitride films
Maeda M, Yamamoto E, Ohfuji S, Itsumi M
Journal of Vacuum Science & Technology B, 17(1), 201, 1999 |
| 7 |
Surface pits observed on SiO2 thermally grown at high temperatures on (111)-oriented Czochralski-silicon
Itsumi M, Okazaki Y, Watanabe M, Ueki T, Yabumoto N
Journal of the Electrochemical Society, 145(6), 2143, 1998 |
| 8 |
Minority-carrier recombination lifetimes of the frontside and backside of Si wafers subjected to plasma processing
Itsumi M
Journal of Vacuum Science & Technology B, 16(3), 1030, 1998 |
| 9 |
Observation of Defects in Thermal Oxides of Polysilicon by Transmission Electron-Microscopy Using Copper Decoration
Itsumi M, Akiya H, Tomita M, Ueki T, Yamawaki M
Journal of the Electrochemical Society, 144(2), 600, 1997 |
| 10 |
On-Chip Decoupling Capacitance with High Dielectric-Constant and Strength Using SrTiO3 Thin-Films Electron-Cyclotron-Resonance-Sputtered at 400-Degrees-C
Itsumi M, Ohfuji S, Tsukada M, Akiya H
Journal of the Electrochemical Society, 144(12), 4321, 1997 |
