검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool Tsukui M, Iyechika Y, Nago H, Takahashi H Journal of Crystal Growth, 509, 103, 2019 |
| 2 |
Carrier-gas dependence of ELO GaN grown by hydride VPE Miyake H, Bohyama S, Fukui M, Hiramatsu K, Iyechika Y, Maeda T Journal of Crystal Growth, 237, 1055, 2002 |
| 3 |
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) Hiramatsu K, Nishiyama K, Onishi M, Mizutani H, Narukawa M, Motogaito A, Miyake H, Iyechika Y, Maeda T Journal of Crystal Growth, 221, 316, 2000 |