검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3 Azzaz M, Benoist A, Vianello E, Garbin D, Jalaguier E, Cagli C, Charpin C, Bernasconi S, Jeannot S, Dewolf T, Audoit G, Guedj C, Denorme S, Candelier P, Fenouillet-Beranger C, Perniola L Solid-State Electronics, 125, 182, 2016 |
| 2 |
Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory Jacob S, De Salvo B, Perniola L, Festes G, Bodnar S, Coppard R, Thiery JF, Pate-Cazal T, Bongiorno C, Lombardo S, Dufourcq J, Jalaguier E, Pedron T, Boulanger F, Deleonibus S Solid-State Electronics, 52(9), 1452, 2008 |
| 3 |
Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory (vol 52, pg 1452, 2008) Jacob S, De Salvo B, Perniola L, Festes G, Bodnar S, Coppard R, Thiery JF, Pate-Cazal T, Bongiorno C, Lombardo S, Dufourcq J, Jalaguier E, Pedron T, Boulanger F, Deleonibus S Solid-State Electronics, 52(11), 1838, 2008 |
| 4 |
Feasibility of III-V on-silicon strain relaxed substrates Kostrzewa M, Grenet G, Regreny P, Leclercq JL, Perreau P, Jalaguier E, Di Cioccio L, Hollinger G Journal of Crystal Growth, 275(1-2), 157, 2005 |
| 5 |
QuaSiC Smart-Cut (R) substrates for SiC high power devices Letertre F, Jalaguier E, Di Cioccio L, Templier F, Bluet JM, Banc C, Matko I, Chenevier B, Bano E, Guillot G, Billon T, Aspar B, Madar R, Ghyselen B Materials Science Forum, 389-3, 151, 2002 |
| 6 |
SiC power devices on QUASIC and SiCOI Smart-Cut (R) substrates: First demonstrations Letertre F, Daval N, Templier F, Bano E, Planson D, Di Ciocco L, Jalaguier E, Bluet JM, Billon T, Madar R, Chante JP Materials Science Forum, 433-4, 813, 2002 |