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| No. | Article |
|---|---|
| 1 |
Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire Arulkumaran S, Egawa T, Ishikawa H, Jimbo J Journal of Vacuum Science & Technology B, 21(2), 888, 2003 |