화학공학소재연구정보센터
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No. Article
1 Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates
Jmerik VN, Kuznetsova NV, Nechaev DV, Shubina TV, Kirilenko DA, Troshkov SI, Davydov VY, Smirnov AN, Ivanov SV
Journal of Crystal Growth, 477, 207, 2017
2 High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure
Rong X, Wang XQ, Ivanov SV, Jiang XH, Chen G, Wang P, Wang WY, He CG, Wang T, Schulz T, Albrecht M, Jmerik VN, Toropov AA, Ratnikov VV, Kozlovsky VI, Martovitsky VP, Jin P, Xu FJ, Yang XL, Qin ZX, Ge WK, Shi JJ, Shen B
Advanced Materials, 28(36), 7978, 2016
3 Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1-xN layers with medium Al content (x=0.4-0.6)
Nechaev DV, Brunkov PN, Troshkov SI, Jmerik VN, Ivanov SV
Journal of Crystal Growth, 425, 9, 2015
4 Metastable nature of InN and In-rich InGaN alloys
Ivanov SV, Shubina TV, Komissarova TA, Jmerik VN
Journal of Crystal Growth, 403, 83, 2014
5 Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE
Nechaev DV, Aseev PA, Jmerik VN, Brunkov PN, Kuznetsova YV, Sitnikova AA, Ratnikov VV, Ivanov SV
Journal of Crystal Growth, 378, 319, 2013
6 Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy
Mizerov AM, Jmerik VN, Yagovkina MA, Troshkov SI, Kop'ev PS, Ivanov SV
Journal of Crystal Growth, 323(1), 68, 2011
7 AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique
Jmerik VN, Shubina TV, Mizerov AM, Belyaev KG, Sakharov AV, Zamoryanskaya MV, Sitnikova AA, Davydov VY, Kop'ev PS, Lutsenko EV, Rzheutskii NV, Danilchik AV, Yablonskii GP, Ivanov SV
Journal of Crystal Growth, 311(7), 2080, 2009
8 InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
Ivanov SV, Jmerik VN, Shubina TV, Listoshin SB, Mizerov AM, Sitnikova AA, Kim MH, Koike M, Kim BJ, Kop'ev PS
Journal of Crystal Growth, 301, 465, 2007
9 Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
Jmerik VN, Mizerov AM, Shubina TV, Yagovkina M, Listoshin VB, Sitnikova AA, Ivanov SV, Kim MH, Koike M, Kim BJ
Journal of Crystal Growth, 301, 469, 2007
10 Plasma-assisted MBE growth and characterization of InN on sapphire
Ivanov SV, Shubina TV, Jmerik VN, Vekshin VA, Kop'ev PS, Monemar B
Journal of Crystal Growth, 269(1), 1, 2004