검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (vol 310, pg 1010, 2008) Black K, Jones AC, Chalker PR, Gaskell JM, MurreyB RT, Joyce TB, Rushworth SA Journal of Crystal Growth, 311(23-24), 4812, 2009 |
| 2 |
MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si Black K, Jones AC, Chalker PR, Gaskell JM, Murray RT, Joyce TB, Rushworth SA Journal of Crystal Growth, 310(5), 1010, 2008 |
| 3 |
Thermal stability of C-doped GaAs/AlAs DBR structures Liang MS, Bullough TJ, Joyce TB Solid-State Electronics, 52(8), 1256, 2008 |
| 4 |
Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ Journal of Crystal Growth, 308(2), 302, 2007 |
| 5 |
Microstructure of epitaxial scandium nitride films grown on silicon Moram MA, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ Applied Surface Science, 252(24), 8385, 2006 |
| 6 |
Basic studies of molecular beam epitaxy - past, present and some future directions Joyce BA, Joyce TB Journal of Crystal Growth, 264(4), 605, 2004 |
| 7 |
Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs Bullough TJ, Davies S, Thomas S, Joyce TB, Chalker PR Solid-State Electronics, 47(3), 407, 2003 |
| 8 |
Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well White SL, Thomas S, Joyce TB, Bullough TJ, Chalker PR, Noakes TCQ, Bailey P, Mazzucato S, Balkan N Solid-State Electronics, 47(3), 425, 2003 |
| 9 |
Optical properties of GaInNAs/GaAs quantum wells Mazzucato S, Erol A, Potter RJ, Balkan N, Chalker PR, Thomas S, Joyce TB, Bullough TJ Solid-State Electronics, 47(3), 483, 2003 |
| 10 |
Compositional variation in as-grown GaInNAs/GaAs quantum well structures Chalker PR, Davock H, Thomas S, Joyce TB, Bullough TJ, Potter RJ, Balkan N Journal of Crystal Growth, 233(1-2), 1, 2001 |