| 1 |
Improvement of trench MOS barrier Schottky rectifier by using high-energy counter-doping trench-bottom implantation
Juang MH, Yu J, Jang SL
Current Applied Physics, 11(3), 698, 2011 |
| 2 |
Formation of polycrystalline thin-film transistors with stacked poly-SiGe/poly-Si channel layer for low-voltage applications
Juang MH, Chang CW, Peng YS, Hwang CC, Wang JL, Shye DC
Thin Solid Films, 519(10), 3393, 2011 |
| 3 |
Formation of microcrystalline-Si thin film transistors by using self-aligned nickel-silicided process
Juang MH, Peng YS, Liu BJ
Thin Solid Films, 519(11), 3902, 2011 |
| 4 |
Study of ultra-shallow p(+)n junctions formed by excimer laser annealing
Juang MH, Lu CN, Jang SL, Cheng HC
Materials Chemistry and Physics, 123(1), 260, 2010 |
| 5 |
Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer
Juang MH, Chang CW, Huang CW, Wang JL, Shye DC, Hwang CC, Jang SL
Solid-State Electronics, 54(3), 303, 2010 |
| 6 |
Formation of n-channel polycrystalline-Si thin-film transistors by dual source/drain implantation
Juang MH, Chang CW, Wang JL, Shye DC, Hwang CC, Jang SL
Solid-State Electronics, 54(5), 516, 2010 |
| 7 |
Formation of 30-V power DMOSFET's by implementing p-counter-doped region within n-type drift layer
Juang MH, Hwang CC, Shye DC, Wang JL, Jang SL
Solid-State Electronics, 54(7), 724, 2010 |
| 8 |
Microcrystalline-Si thin-film transistors formed by using palladium silicided source/drain contact electrode
Juang MH, Peng YS, Wang JL, Shye DC, Hwang CC, Jang SL
Solid-State Electronics, 54(12), 1532, 2010 |
| 9 |
Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure
Juang MH, Peng YS, Wang JL, Shye DC, Hwang CC, Jang SL
Solid-State Electronics, 54(12), 1686, 2010 |
| 10 |
Formation of polycrystalline-Si thin-film transistors with tunneling field-effect-transistor structure
Juang MH, Hu PS, Jang SL
Thin Solid Films, 518(14), 3978, 2010 |
