검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Low thermal budget for Si and SiGe surface preparation for FD-SOI technology Labrot M, Cheynis F, Barge D, Muller P, Juhel M Applied Surface Science, 371, 436, 2016 |
| 2 |
Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors Essa Z, Pelletier B, Morin P, Boulenc P, Pakfar A, Tavernier C, Wacquant F, Zechner C, Juhel M, Autran JL, Cristiano F Solid-State Electronics, 126, 163, 2016 |
| 3 |
Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates Ravanel X, Trouiller C, Juhel M, Wyon C, Kwakman LFT, Leonard D Applied Surface Science, 255(4), 1415, 2008 |
| 4 |
Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source Ravanel X, Trouiller C, Juhel M, Wyon C, Kwakman LFT, Leonard D Applied Surface Science, 255(4), 1440, 2008 |
| 5 |
Low-temperature low-resistivity PEALD TiN using TDMAT under hydrogen reducing ambient Caubet P, Blomberg T, Benaboud R, Wyon C, Blanquet E, Gonchond JP, Juhel M, Bouvet P, Gros-Jean M, Michailos J, Richard C, Iteprat B Journal of the Electrochemical Society, 155(8), H625, 2008 |
| 6 |
SIMS depth profiling of SiGe : C structures in test pattern areas using low energy cesium with a Cameca IMS Wf Juhel M, Laugier F Applied Surface Science, 231-2, 698, 2004 |
| 7 |
Anisotropic Etching of InP with Low Sidewall and Surface-Induced Damage in Inductively-Coupled Plasma-Etching Using Sicl4 Etrillard J, Ossart P, Patriarche G, Juhel M, Bresse JF, Daguet C Journal of Vacuum Science & Technology A, 15(3), 626, 1997 |
| 8 |
Sidewall and Surface-Induced Damage Comparison Between Reactive Ion Etching and Inductive Plasma-Etching of InP Using a CH4/H-2/O-2 Gas-Mixture Etrillard J, Heliot F, Ossart P, Juhel M, Patriarche G, Carcenac P, Vieu C, Puech M, Maquin P Journal of Vacuum Science & Technology A, 14(3), 1056, 1996 |
| 9 |
(NH4)(2)S-X Preepitaxial Treatment for GaAs Chemical Beam Epitaxy Regrowth Sik H, Driad R, Legay P, Juhel M, Harmand JC, Launay P, Alexandre F Journal of Vacuum Science & Technology B, 14(1), 147, 1996 |
| 10 |
High-Stability Heterojunction Bipolar-Transistors with Carbon-Doped Base Grown by Atomic Layer Chemical Beam Epitaxy Driad R, Alexandre F, Juhel M, Launay P Journal of Vacuum Science & Technology B, 14(6), 3509, 1996 |