검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Measurement of defect-mediated diffusion: The case of silicon self-diffusion Vaidyanathan R, Jung MYL, Braatz RD, Seebauer EG AIChE Journal, 52(1), 366, 2006 |
| 2 |
A multiscale systems approach to microelectronic processes Braatz RD, Alkire RC, Seebauer EG, Drews TO, Rusli E, Karulkar M, Xue F, Qin Y, Jung MYL, Gunawan R Computers & Chemical Engineering, 30(10-12), 1643, 2006 |
| 3 |
Pair diffusion and kick-out: Ceontributions to diffusion of boron in silicon Jung MYL, Gunawan R, Braatz RD, Seebauer EG AIChE Journal, 50(12), 3248, 2004 |
| 4 |
Optimal control of rapid thermal annealing in a semiconductor process Gunawan R, Jung MYL, Seebauer EG, Braatz RD Journal of Process Control, 14(4), 423, 2004 |
| 5 |
A simplified picture for transient enhanced diffusion of boron in silicon Jung MYL, Gunawan R, Braatz RD, Seebauer EG Journal of the Electrochemical Society, 151(1), G1, 2004 |
| 6 |
Maximum A posteriori estimation of transient enhanced diffusion energetics Gunawan R, Jung MYL, Seebauer EG, Braatz RD AIChE Journal, 49(8), 2114, 2003 |
| 7 |
Parameter sensitivity analysis applied to modeling transient enhanced diffusion and activation of boron in silicon Gunawan R, Jung MYL, Braatz RD, Seebauerz EG Journal of the Electrochemical Society, 150(12), G758, 2003 |
| 8 |
Ramp-rate effects on transient enhanced diffusion and dopant activation Jung MYL, Gunawan R, Braatz RD, Seebauer EG Journal of the Electrochemical Society, 150(12), G838, 2003 |