검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources Juppo M, Alen P, Ritala M, Sajavaara T, Keinonen J, Leskela M Electrochemical and Solid State Letters, 5(1), C4, 2002 |
| 2 |
Atomic layer deposition of Ta(Al)N(C) thin films using trimethylaluminum as a reducing agent Alen P, Juppo M, Ritala M, Sajavaara T, Keinonen J, Leskela M Journal of the Electrochemical Society, 148(10), G566, 2001 |
| 3 |
Use of 1,1-dimethylhydrazine in the atomic layer deposition of transition metal nitride thin films Juppo M, Ritala M, Leskela M Journal of the Electrochemical Society, 147(9), 3377, 2000 |
| 4 |
In situ mass spectrometry study on, surface reactions in atomic layer deposition of Al2O3 thin films from trimethylaluminum and water Juppo M, Rahtu A, Ritala M, Leskela M Langmuir, 16(8), 4034, 2000 |
| 5 |
Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures Martensson P, Juppo M, Ritala M, Leskela M, Carlsson JO Journal of Vacuum Science & Technology B, 17(5), 2122, 1999 |
| 6 |
Deposition of molybdenum thin films by an alternate supply of MoCl5 and Zn Juppo M, Vehkamaki M, Ritala M, Leskela M Journal of Vacuum Science & Technology A, 16(5), 2845, 1998 |
| 7 |
Deposition of Copper-Films by an Alternate Supply of CuCl and Zn Juppo M, Ritala M, Leskela M Journal of Vacuum Science & Technology A, 15(4), 2330, 1997 |