검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure Ikuta T, Fujita S, Iwamoto H, Kadomura S, Shimura T, Watanabe H, Yasutake K Journal of Crystal Growth, 310(21), 4507, 2008 |
| 2 |
On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during SiO2 etching process Jinnai B, Orita T, Konishi M, Hashimoto J, Ichihashi Y, Nishitani A, Kadomura S, Ohtake H, Samukawa S Journal of Vacuum Science & Technology B, 25(6), 1808, 2007 |