| 1 |
Dopants (P, as, and B) in the Polycrystalline Silicon/Titanium Silicide System - Redistribution and Activation
Kalnitsky A, Hurley PK, Lepert A
Journal of the Electrochemical Society, 144(3), 1090, 1997 |
| 2 |
TiSi2 Integration Ina Submicron CMOS Process .1. Salicide Formation
Brun N, Kalnitsky A, Brun A
Journal of the Electrochemical Society, 142(6), 1987, 1995 |
| 3 |
TiSi2 Integration in a Submicron CMOS Process .2. Integration Issues
Kalnitsky A, Brun N, Brun A, Gonchond JP
Journal of the Electrochemical Society, 142(6), 1992, 1995 |
| 4 |
Thermal-Wave Imaging to Characterize the Formation of Titanium Disilicide on Monocrystalline, Poly-Silicon, and Crystallized Amorphous-Silicon Substrates
Brun A, Brun N, Kalnitsky A
Journal of the Electrochemical Society, 142(6), 1996, 1995 |
| 5 |
Effect of Low-Temperature (Less-Than-900-Degrees-C) Rta on the Conductivity of as-Implanted Layers and Metal to P+ Contact Resistance
Kalnitsky A, Macnaughton R, Li J
Journal of the Electrochemical Society, 141(8), 2223, 1994 |
