검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique Kambayashi H, Satoh Y, Kokawa T, Ikeda N, Nomura T, Kato S Solid-State Electronics, 56(1), 163, 2011 |
| 2 |
Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage Kambayashi H, Satoh Y, Ootomo S, Kokawa T, Nomura T, Kato S, Chow TSP Solid-State Electronics, 54(6), 660, 2010 |
| 3 |
High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates Nomura T, Kambayashi H, Niiyama Y, Otomo S, Yoshida S Solid-State Electronics, 52(1), 150, 2008 |
| 4 |
Synthesis of nanostructured metal oxide by liquid-phase deposition Aoi Y, Kambayashi H, Deguchi T, Yato K, Deki S Electrochimica Acta, 53(1), 175, 2007 |
| 5 |
250 degrees C operation normally-off GaN MOSFETs Niiyama Y, Kambayashi H, Ootomo S, Nomura T, Yoshida S Solid-State Electronics, 51(5), 784, 2007 |
| 6 |
Growth characteristics of CaxCd1-xF2 films on Si substrates using CaF2 buffer layer Kambayashi H, Gotoh T, Maeda H, Tsutsui K Journal of Crystal Growth, 237, 2061, 2002 |