| 1 |
Evidence for a large, thermal-activated characteristic length scale in unstable homoepitaxial growth on GaAs (001)
Lin CF, Kan HC, Kanakaraju S, Richardson CJ, Phaneuf RJ
Journal of Crystal Growth, 381, 83, 2013 |
| 2 |
Lateral InP/InGaAs double heterojunction phototransistor over a trenched interdigitated finger structure
Kim J, Johnson WB, Kanakaraju S, Lee CH
Solid-State Electronics, 51(7), 1023, 2007 |
| 3 |
Characterization of hydrogen silsesquioxane as a Cl-2/BCl3 inductively coupled plasma etch mask for air-clad InP-based quantum well waveguide fabrication
Park D, Stievater TH, Rabinovich WS, Green N, Kanakaraju S, Calhoun LC
Journal of Vacuum Science & Technology B, 24(6), 3152, 2006 |
| 4 |
Studies on Ge/CeO2 thin film system using positron beam and Raman spectroscopy
Rao GV, Amarendra G, Viswanathan B, Kanakaraju S, Balaji S, Mohan S, Sood AK
Thin Solid Films, 406(1-2), 250, 2002 |
| 5 |
Optical and Structural-Properties of Reactive Ion-Beam Sputter-Deposited CeO2 Films
Kanakaraju S, Mohan S, Sood AK
Thin Solid Films, 305(1-2), 191, 1997 |
