화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Formation of < 001 >-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl
Hamamatsu A, Kaneshiro C, Fujikura H, Hasegawa H
Journal of Electroanalytical Chemistry, 473(1-2), 223, 1999
2 Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process
Hasegawa H, Sato T, Kaneshiro C
Journal of Vacuum Science & Technology B, 17(4), 1856, 1999
3 Nanoscale Etching of GaAs-Surfaces in Electrolytic Solutions by Hole Injection from a Scanning Tunneling Microscope Tip
Kaneshiro C, Okumura T
Journal of Vacuum Science & Technology B, 15(5), 1595, 1997
4 Nanofabrication on N-GaAs Surface Using a Scanning Tunneling Microscope in a Ni-Salt Solution
Kaneshiro C, Okumura T
Thin Solid Films, 281-282, 606, 1996