검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct Kanjolia R, Jones AC, Ashraf S, Bacsa J, Black K, Chalker PR, Beahan P, Hindley S, Odedra R, Williams PA, Heys PN Journal of Crystal Growth, 315(1), 292, 2011 |
| 2 |
Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine Chen GY, Cheng D, Hicks RF, Noori AM, Hayashi SL, Goorsky MS, Kanjolia R, Odedra R Journal of Crystal Growth, 270(3-4), 322, 2004 |
| 3 |
Correlation of reduced oxygen content in precursors with improved MOVPE layer quality Rushworth SA, Smith LM, Ravetz MS, Coward KM, Odedra R, Kanjolia R, Bland SW, Dimroth F, Bett AW Journal of Crystal Growth, 248, 86, 2003 |
| 4 |
Pyrolysis of dimethylhydrazine and its co-pyrolysis with triethylgallium Bourret-Courchesne E, Ye Q, Peters DW, Arnold J, Ahmed M, Irvine SJC, Kanjolia R, Smith LM, Rushworth SA Journal of Crystal Growth, 217(1-2), 47, 2000 |
| 5 |
Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices Smith LM, Rushworth SA, Ravetz MS, Odedra R, Kanjolia R, Agert C, Dimroth F, Schubert U, Bett AW Journal of Crystal Growth, 221, 86, 2000 |
| 6 |
MOVPE of GaN on sapphire using the alternate precursor 1,1-dimethylhydrazine Bourret-Courchesne ED, Yu KM, Irvine SJC, Stafford A, Rushworth SA, Smith LM, Kanjolia R Journal of Crystal Growth, 221, 246, 2000 |