검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Evaluation of oriented lysozyme immobilized with monoclonal antibody Aoyagi S, Okada K, Shigyo A, Man N, Karen A Applied Surface Science, 255(4), 1096, 2008 |
| 2 |
The reduction of the change of secondary ions yield in the thin SiON/Si system Sameshima J, Yamamoto H, Hasegawa T, Nishina T, Nishitani T, Yoshikawa K, Karen A Applied Surface Science, 252(19), 7190, 2006 |
| 3 |
Quantification of nitrogen profiles in HfSiON films for gate dielectrics Yamamoto T, Miyamoto T, Karen A Applied Surface Science, 231-2, 561, 2004 |
| 4 |
Depth profiles of boron and nitrogen in SiON films by backside SIMS Sameshima J, Maeda R, Yamada K, Karen A, Yamada S Applied Surface Science, 231-2, 614, 2004 |
| 5 |
Study on change in SIMS intensities near the interface between silicon-nitride film and silicon substrate Hasegawa T, Date T, Karen A, Masuda A Applied Surface Science, 231-2, 725, 2004 |
| 6 |
TOF-SIMS measurement of ultra-thin SiO2 films prepared by the graded-etching method Shibamori T, Muraji Y, Man N, Karen A Applied Surface Science, 203, 449, 2003 |
| 7 |
SIMS quantification of low concentration of nitrogen doped in silicon crystals Fujiyama N, Karen A, Sams DB, Hockett RS, Shingu K, Inoue N Applied Surface Science, 203, 457, 2003 |
| 8 |
SIMS depth profile of copper in low-k dielectrics under electron irradiation for charge compensation Yamada K, Fujiyama N, Sameshima J, Kamoto R, Karen A Applied Surface Science, 203, 512, 2003 |
| 9 |
Characterization of high-k gate dielectric films using SIMS Yamamoto T, Morita N, Sugiyama N, Karen A, Okuno K Applied Surface Science, 203, 516, 2003 |
| 10 |
TOF-SIMS characterization of industrial materials: from silicon wafer to polymer Karen A, Man N, Shibamori T, Takahashi K Applied Surface Science, 203, 541, 2003 |