검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-ln/Sb content for very low turn-on-voltage InP-based DHBTs (vol 404, pg 172, 2014) Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H Journal of Crystal Growth, 424, 80, 2015 |
| 2 |
MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H Journal of Crystal Growth, 404, 172, 2014 |