검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Computer simulation for morphology, size, and density of oxide precipitates in CZ silicon Sueoka K, Akatsuka M, Okui M, Katahama H Journal of the Electrochemical Society, 150(8), G469, 2003 |
| 2 |
Nitrogen effect on grown-in defects in Czochralski silicon crystals Umeno S, Ono T, Tanaka T, Asayama E, Nishikawa H, Hourai M, Katahama H, Sano M Journal of Crystal Growth, 236(1-3), 46, 2002 |
| 3 |
Hydrogen plasma irradiation and postannealing effects on crystalline quality at vicinal Si (100) surface Asai K, Komachi K, Kamei K, Katahama H Applied Surface Science, 153(2-3), 134, 2000 |
| 4 |
Effect of heavy boron doping on oxygen precipitation in Czochralski silicon substrates of epitaxial wafers Sueoka K, Akatsuka M, Yonemura M, Ono T, Asayama E, Katahama H Journal of the Electrochemical Society, 147(2), 756, 2000 |
| 5 |
Internal gettering for Ni contamination in Czochralski silicon wafers Sueoka K, Sadamitsu S, Koike Y, Kihara T, Katahama H Journal of the Electrochemical Society, 147(8), 3074, 2000 |
| 6 |
Investigation of the mechanical strength of hydrogen-annealed Czochralski silicon wafers Sueoka K, Akatsuka M, Katahama H, Adachi N Journal of the Electrochemical Society, 146(1), 364, 1999 |
| 7 |
Calculation of slip length in 300 mm silicon wafers during thermal processes Akatsuka M, Sueoka K, Katahama H, Adachi N Journal of the Electrochemical Society, 146(7), 2683, 1999 |
| 8 |
Dependence of Mechanical Strength of Czochralski Silicon-Wafers on the Temperature of Oxygen Precipitation Annealing Sueoka K, Akatsuka M, Katahama H, Adachi N Journal of the Electrochemical Society, 144(3), 1111, 1997 |